一种高精度CMOS温度传感器的设计  

Design of a high accuracy CMOS temperature sensor

作　　者：陈贵宝 郭仲杰[1,2] 李婷 魏海龙 CHEN Gui-bao;GUO Zhong-jie;LI Ting;WEI Hai-long(Xi'an Microelectronics Technology Institute,Xi'an 710054,China;College of Automation and InformationEngineering,Xi'an University of Technology,Xizan 710048,China)

机构地区：[1]西安微电子技术研究所,陕西西安710054 [2]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《微电子学与计算机》2019年第8期34-38,44,共6页Microelectronics & Computer

摘　　要：基于标准CMOS工艺,提出了一种高精度低功耗的温度传感器.通过采用高精度比例电流生成模块、纵向寄生的NPN型双极晶体管以及改进的输出端结构等措施,抑制了电路噪声、提高了温度到电压的转换精度.基于55nm CMOS工艺,采用Spectre工具对电路进行仿真,结果表明:该温度传感器在-55℃~85℃内灵敏度为3.84 mV/℃,仿真精度为0.17℃,电路功耗为130μA.经过后端物理实现后,版图面积为325μm×64μm.采用STAR_RCXT对该电路提参后仿,得到后仿真精度为0.14℃/-0.24℃.Based on standard CMOS process, a high accuracy and low power temperature sensor is proposed. By adopting high precision proportional current generation modules, vertical parasitic NPN bipolar transistors and improving output end structure, the noise of the circuit is suppressed and the temperature to voltage conversion accuracy is improved. Based on 55nm CMOS process, the circuit has been simulated with Spectre tool. The simulation results show that the sensitivity of the temperature sensor is 3. 84 mV/℃ and the inaccuracy is 0. 17℃ as the temperature differs from.55℃ to 85℃. The whole circuit dissipates 130μA. After the back-end physical implementation, the layout of the temperature sensor occupies an area of 325μm×64μm Using STAR_RCXT to extract parasitic parameters from the layout and conduct post-simulation, the result indicates that the inaccuracy is 0.14 ℃/-0.24℃.

关 键 词：温度传感器 高精度 寄生NPN管 开关电容电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]