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作 者:惠勇凌[1] 姜梦华[1] 雷訇[1] 李强[1] Hui Yongling;Jiang Menghua;Lei Hong;Li Qiang(Institute of Laser Engineering,Beijing University of Technology,Beijing100124,China)
机构地区:[1]北京工业大学激光工程研究院
出 处:《应用激光》2019年第3期490-494,共5页Applied Laser
基 金:北京市自然科学基金资助项目(项目编号:4174085,KZ201610005006);国家重大科研装备研制项目(项目编号:ZDYZ2013-2)
摘 要:报道了一种结构简单紧凑的高峰值功率抽运单级双通掠入射Nd:YVO4板条放大器。为了抑制高峰值功率抽运时的放大自发辐射(Amplified spontaneous emission,ASE),板条晶体上下表面镀锗处理,并设计了掠入射全反射中心点与抽运区域中心点不重叠的双通放大光路。采用该放大器对重复频率200 Hz,单脉冲能量10μJ,脉冲宽度24 ns的种子光进行放大,在最大抽运能量35 mJ时,获得了单脉冲能量2.7 mJ,脉冲宽度24.3 ns,光束质量因子M2约1.2的激光输出,能量提取效率7.7%。A simple and compact high peak power pumped single-stage dual-pass Nd:YVO4bounce slab amplifier is reported. In order to suppress the amplified spontaneous emission(ASE) during high peak power pumping, the upper and lower surfaces of the slab crystal are plated with germanium, and a dual-pass amplifying optical path is designed which grazing incidence total reflection center point does not overlap with the center point of the pumping area. The amplifier is used to amplify seed laser with a repetition rate of 200 Hz, a single pulse energy of 10 μJ and a pulse width of 24 ns. At a maximum pumping energy of 35 mJ, an amplified output laser with a single pulse energy of 2.7 mJ, a pulse width of 24.3 ns and a beam quality factor M2 of about 1.2 is obtained, the energy extraction efficiency is 7.7%.
关 键 词:板条放大器 ND:YVO4 双通放大 半导体抽运
分 类 号:TN248.1[电子电信—物理电子学]
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