Y3+掺杂BaTiO3陶瓷的介电弛豫特性研究  被引量:1

Dielectric relaxation properties of Y3+ doped BaTiO3 ceramics

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作  者:张晓云 丁士华[1] 宋天秀[1] 张云 黄龙 ZHANG Xiaoyun;DING Shihua;SONG Tianxiu;ZHANG Yun;HUANG Long(School of Materials Science and Engineering,Xihua University,Chengdu 610039,China)

机构地区:[1]西华大学材料科学与工程学院

出  处:《电子元件与材料》2019年第8期35-42,共8页Electronic Components And Materials

基  金:教育部“春晖计划”合作科研项目(Z2011077);四川省特种材料及制备技术重点实验室开放课题资助项目(szjj2017-059);四川省教育厅资助项目(14ZB0126);四川省粉末冶金工程技术中心资助项目(SC-FMYJ2017-04; SC-FMYJ2017-07);国家自然科学基金(11074203);西华大学研究生创新基金(ycjj2018012; ycjj2018013)

摘  要:采用固相法制备了Y^3+掺杂的BaTiO3陶瓷(BaTi1-x YxO3,0.005≤x≤0.04)样品.借助XRD、LCR分析仪等手段对陶瓷的结构和介电性能进行了分析研究.结果表明:随掺杂量增加,陶瓷样品四方率减小,在x=0.03时陶瓷由四方相转变为立方相,当x≥0.01时,陶瓷样品出现了第二相.Y^3+能够抑制BaTiO3陶瓷晶粒长大.结合GULP代码模拟计算和实验数据可知,x<0.01时掺杂机制为电子补偿,陶瓷发生了半导化,x≥0.01时主要为离子补偿.介电峰值随Y^3+掺杂量的增加而向低温移动并展宽,且峰值介电常数随掺杂量增加逐渐减小.随着Y3+掺杂量增加,缺陷偶极子浓度增大,陶瓷呈现弛豫铁电体特征.BaTiO3 ceramics doped with Y3+ions(BaTi1-x Yx O3,0.005≤x≤0.04)were prepared by solid state reaction method.The crystal structure and dielectric properties of the ceramics were investigated by XRD and LCR analyzer.The results show that the tetragonal ratio of the crystal structure decreases as the dopant concentration increases.At x=0.03,the crystal structure of the ceramics transforms from tetragonal to cubic phase.Secondary phase is observed at x≥0.01.Y3+ions can inhibit the grain growth of BaTiO3 ceramics.The GULP simulation and experimental results show that electronic compensation mechanism dominate at x<0.01 and the ceramics is semiconducting.In the contrast,ion compensation mechanism dominate at x≥0.01.As the Y^3+dopant concentration increases,the dielectric peak is broadened and shifts to lower temperature,and the relative permittivity decreases.At the same time,the defect dipole concentration increases,leading to relaxor ferroelectric behavior.

关 键 词:BATIO3陶瓷 掺杂机制 缺陷能 半导化 介电性能 弛豫铁电体 

分 类 号:TM22[一般工业技术—材料科学与工程]

 

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