High temperature magnetic semiconductors: narrow band gaps and two-dimensional systems  

作　　者：Bo Gu 

机构地区：[1]Kavli Institute for Theoretical Sciences, and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences [2]Physical Science Laboratory, Huairou National Comprehensive Science Center

出　　处：《Journal of Semiconductors》2019年第8期36-44,共9页半导体学报（英文版）

基　　金：supported by NSFC (Grant No. Y81Z01A1A9);CAS (Grant No. Y929013EA2);UCAS (Grant No.110200M208);the Strategic Priority Research Program of CAS (Grant No. XDB28000000);the National Key R&D Program of China (Grant No.11834014);Beijing Municipal Science & Technology Commission (Grant No. Z181100004218001)

摘　　要：Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted magnetic semiconductors are few. Using a combined method of the density function theory and quantum Monte Carlo simulation, we briefly discuss the recent progress to obtain diluted magnetic semiconductors with both p- and n-type carriers by choosing host semiconductors with a narrow band gap. In addition, the recent progress on two-dimensional intrinsic magnetic semiconductors with possible room temperature ferromangetism and quantum anomalous Hall effect are also discussed.Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted magnetic semiconductors are few. Using a combined method of the density function theory and quantum Monte Carlo simulation, we briefly discuss the recent progress to obtain diluted magnetic semiconductors with both p-and n-type carriers by choosing host semiconductors with a narrow band gap. In addition, the recent progress on two-dimensional intrinsic magnetic semiconductors with possible room temperature ferromangetism and quantum anomalous Hall effect are also discussed.

关 键 词：magnetic SEMICONDUCTOR NARROW BAND GAP two DIMENSIONAL systems 

分 类 号：TN[电子电信]