Advances in new generation diluted magnetic semiconductors with independent spin and charge doping  

作　　者：Guoqiang Zhao Zheng Deng Changqing Jin 

机构地区：[1]Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2]School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, China

出　　处：《Journal of Semiconductors》2019年第8期45-56,共12页半导体学报（英文版）

基　　金：financially supported by Ministry of Science and Technology of China (Nos. 2018YFA03057001, and 2017YFB0405703);National Natural Science Foundation of China through the research projects (No. 11534016)

摘　　要：As one branch of spintronics, diluted magnetic semiconductors (DMSs) are extensively investigated due to their fundamental significance and potential application in modern information society. The classical materials (Ga,Mn)As of III-V group based DMSs has been well studied for its high compatibility with the high-mobility semiconductor GaAs. But the Curie temperature in (Ga,Mn)As film is still far below room temperature because the spin & charge doping is bundled to the same element that makes the fabrication very difficult. Alternatively, the discovery of a new generation DMSs with independent spin and charge doping, such as (Ba,K)(Zn,Mn)2As2 (briefly named BZA), attracted considerable attention due to their unique advantages in physical properties and heterojunction fabrication. In this review we focus on this series of new DMSs including (I) materials in terms of three types of new DMSs, i.e. the "111","122" and "1111" system;(II) the physical properties of BZA;(III) single crystals & prototype device based on BZA. The prospective of new type of DMSs with independent spin and charge doping is briefly discussed.As one branch of spintronics, diluted magnetic semiconductors(DMSs) are extensively investigated due to their fundamental significance and potential application in modern information society. The classical materials(Ga,Mn)As of Ⅲ–Ⅳ group based DMSs has been well studied for its high compatibility with the high-mobility semiconductor GaAs. But the Curie temperature in(Ga,Mn)As film is still far below room temperature because the spin & charge doping is bundled to the same element that makes the fabrication very difficult. Alternatively, the discovery of a new generation DMSs with independent spin and charge doping, such as(Ba,K)(Zn,Mn)2 As2(briefly named BZA), attracted considerable attention due to their unique advantages in physical properties and heterojunction fabrication. In this review we focus on this series of new DMSs including(Ⅰ) materials in terms of three types of new DMSs, i.e. the "111", "122" and "1111" system;(Ⅱ) the physical properties of BZA;(Ⅲ) single crystals & prototype device based on BZA. The prospective of new type of DMSs with independent spin and charge doping is briefly discussed.

关 键 词：DILUTED magnetic SEMICONDUCTORS INDEPENDENT SPIN and charge doping high CURIE temperature 

分 类 号：TN[电子电信]