一种抗电离干扰的高速串行驱动器  

High Speed SerDes Driver with Anti-Ionization Interference

作　　者：邹家轩[1,2] 于宗光[1,2] 曹晓斌 袁霄 Zou Jiaxuan;Yu Zongguang;Cao Xiaobin;Yuan Xiao(School of Microelectronics,Xidian University,Xi'an 710071,China;The 58th Research Institute,CETC,Wuxi 214035,China)

机构地区：[1]西安电子科技大学微电子学院,西安710071 [2]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《半导体技术》2019年第8期600-605,共6页Semiconductor Technology

基　　金：国家“十三五”微电子预研项目(31513010412)

摘　　要：针对工业界高速串行接口(SerDes)发射级的驱动器在电离干扰条件下受到单粒子效应(SEE)干扰导致传输出错的问题,分析了经典高速SerDes驱动器结构受SEE干扰的机理,提出了一种采用密勒补偿的互补电流源全差分驱动电路结构,能够显著抑制单粒子效应在驱动器敏感节点上引起的扰动,改善高速SerDes抗SEE干扰的能力。基于所提出的驱动器结构设计了一款3.125 Gbit/s的高速SerDes收发器,并在130 nm部分耗尽型(PD)绝缘体上硅(SOI)CMOS工艺下完成了流片。在SEE的干扰条件下的测试结果显示,该驱动器的单粒子瞬态能量阈值显著高于经典结构驱动器,达到21.9MeV·cm^2·mg^-1,可应用于星载计算机高速数据传输。Aiming at the problem that the industrial high speed serial interface(SerDes) driver is subjected to single event effects(SEEs) interference induced transmission error under ionization interfe-rence conditions, the mechanism of the SEEs interference of the classical high speed SerDes driver structure was analyzed. A complementary current source fully differential driving circuit structure with Miller-compensation was presented, which can significantly suppress the SEEs induced interference at the driver′s sensitive nodes and hence improve the immunity to the SEEs interference of the high speed SerDes. On the basis of the proposed driver structure, a 3.125 Gbit/s high speed SerDes transceiver was designed and fabricated in 130 nm partially depleted(PD) silicon on insulator(SOI) CMOS process. The test results under SEEs interference conditions show that the single event transient energy threshold of the driver is significantly higher than that of the driver with classical structure, reaching 21.9 MeV·cm2·mg-1, which can be applied to onboard computer high speed data transmission.

关 键 词：抗电离辐射 单粒子效应(SEE) 高速串行接口(SerDes) 驱动器 绝缘体上硅(SOI) 

分 类 号：TN433[电子电信—微电子学与固体电子学]