低气压CF4等离子体发射光谱分析  

Analysis of Emission Spectra on CF4 Plasma in Low-Pressure

作　　者：常富强 施芸城[1] CHANG Fuqiang;SHI Yuncheng(College of Science,Donghua University,Shanghai 201620, China)

机构地区：[1]东华大学理学院

出　　处：《东华大学学报（自然科学版）》2019年第4期621-625,644,共6页Journal of Donghua University(Natural Science)

摘　　要：通过观察容性耦合等离子体放电中CF4等离子体光谱来对电子温度和电子密度进行诊断与分析。结果表明:在CF4等离子体中,电源功率小于180 W时,电子温度随气压的增大先升高后降低,随着功率的增大而略升高;电子密度随着气体压强增大而始终减小,随功率的增大而增大;在CF4+O2混合情况下电子温度随着O2和CF4流量比的增大而降低。The electron temperature and electron density were diagnosed by observing the spectra of CF4 plasma in capacitive coupling plasma.The results show that when the radio frequency power is lower than 180 W,the electron temperature rises up first and then turns down with the increase of pressure,and rises a little with the increase of supply power.The electron density decreases with the increase of pressure,and increases with the increase of supply power.When mixing O2 to CF4,the electron temperature decreases with the increase of O2-CF4 flow ratio.

关 键 词：射频放电 等离子体诊断 发射光谱 

分 类 号：O536[理学—等离子体物理]