纳米Bi2O3掺杂对ZnO压敏电阻片电学性能的影响  

Effect of Nano-Bi2O3 Doping on Electrical Properties of ZnO Varistors

作　　者：夏昌其[1] 钟春燕[1] 李自立[1] Xia Changqi;Zhong Chunyan(Guizhou Industry Polytechnic College,Guiyang 550008,China)

机构地区：[1]贵州工业职业技术学院

出　　处：《山东化工》2019年第16期140-141,共2页Shandong Chemical Industry

基　　金：贵州工业职业技术学院科研项目(20172K02)

摘　　要：为获得电学性能优异、生产成本低的ZnO压敏电阻片,本文采用传统陶瓷烧结技术制备ZnO压敏电阻片,研究不同含量纳米Bi2O3掺杂对ZnO压敏电阻片的电位梯度、漏电流、非线性系数等电性能的影响。采用压敏电阻直流参数仪对ZnO压敏电阻片的电学性能进行表征。实验结果表明,随着纳米Bi2O3含量的增加,ZnO压敏电阻片的电位梯度先升高后降低,漏电流变化不显著,非线性系数先增大后减小。当掺杂纳米Bi2O3摩尔分数为0.80%时,ZnO压敏电阻片的电学性能最佳。In order to obtain ZnO varistor with an excellent electrical performance and low production cost,ZnO varistor was prepared by traditional ceramic sintering technology.The effects of different content of nano-Bi 2O 3 doping on the electrical properties such as voltage gradient,leakage current and nonlinear coefficient of ZnO varistor were studied in this paper.The electrical properties were investigated by DC parameter instrument for varistor.The experimental results show that the voltage gradient of ZnO varistors increases firstly and then decreases with increase of nano-Bi 2O 3 content,and the leakage current changes are not significant.At the same time,the nonlinear coefficient increases firstly and then decreases.The electrical properties of the ZnO varistors are the best when the content of nano-Bi 2O 3 is 0.80 %.

关 键 词：ZNO压敏电阻片 电位梯度 漏电流 非线性系数 

分 类 号：TB34[一般工业技术—材料科学与工程] TM54[电气工程—电器]