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作 者:孙鹏菊[1] 王海波[1] 龚灿[1] 杜雄[1] 罗全明[1] 王志远 SUN Pengju;WANG Haibo;GONG Can;DU Xiong;LUO Quanming;WANG Zhiyuan(State Key Laboratory of Power Transmission Equipment & System Security and New Technology (Chongqing University),Shapingba District, Chongqing 400044, China)
机构地区:[1]输配电装备及系统安全与新技术国家重点实验室(重庆大学)
出 处:《中国电机工程学报》2019年第16期4876-4883,共8页Proceedings of the CSEE
基 金:国家自然科学基金项目(51577020,51137006)~~
摘 要:绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)是功率变流器中故障率最高的元器件,键合线老化脱落是其中最常见的一种失效形式。文中研究短路电流作为IGBT模块键合线老化特征量的机理。首先简述IGBT模块键合线老化对应的内部寄生参数与短路电流的定性关系,建立包含键合线和铝金属基板的发射极等效电阻网络模型。依据键合线分布情况,分析键合线老化对电阻网络的影响,进而分析对短路电流的影响关系,最后对不同键合线老化状态下的IGBT模块的短路电流进行实验测量和分析。分析结果表明,等效电阻网络模型能很好地反映键合线分布情况与老化特征量之间的对应关系,实验结果与理论分析基本一致,验证了短路电流作为IGBT模块键合线老化特征量机理研究的正确性。The insulated gate bipolar transistor(IGBT) is the highest failure rate component in power converter and the ageing of bond wires is one of the most significant failure mechanisms in IGBT modules. The mechanism research of short-circuit current as bond wire ageing indicator of IGBT module was presented. Firstly, the relationship between the short-circuit current and the deterioration of bond wire and aluminum metal in IGBT module was analyzed briefly, then the emitter equivalent resistance network model including bond wire and aluminum metal was established. According to the structure of the bond wire, the impact of bond wire ageing on the resistance network and the short-circuit current were analyzed. Finally, the short-circuit current value of the IGBT module under different aging conditions were measured and analyzed. The research results show that the equivalent resistance network model can well reflect the relationship between the structure of the bond wire and the ageing indicator.The experimental results were in accordance with the theoretical analysis basically, which verifies the correctness of the mechanism of the short-circuit current as an ageing indicator.
关 键 词:绝缘栅双极型晶体管模块 电阻网络模型 短路电流 老化机理
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