磷酸盐体系正向电压对ZrH1.8表面阻氢陶瓷层的影响  

ZrH1.8 Surface Resistance Ceramic Layer in Phosphate System under Different Forward Voltages

作　　者：李世江 闫淑芳[1] 陈伟东[1,2] 杜培 杨少辉 马文 Li Shijiang;Yan Shufang;Chen Weidong;Du Pei;Yang Shaohui;Ma Wen(College of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhol 010051 China;Inner Mongolia Key Laboratory of Thin Film and Coatings Technology, Hohhot 010051 , China)

机构地区：[1]内蒙古工业大学材料科学与工程学院,内蒙古呼和浩特010051 [2]内蒙古自治区薄膜与涂层重点实验室,内蒙古呼和浩特010051

出　　处：《稀有金属》2019年第8期831-837,共7页Chinese Journal of Rare Metals

基　　金：国家自然科学基金项目(51164023,51364026);内蒙古自然科学基金项目(2016MS0505);内蒙古工业大学科学研究项目(X201410)资助

摘　　要：磷酸盐电解液体系下,以CeO2作为电解液添加剂,采用恒压模式对氢化锆(ZrH1.8)表面进行微弧氧化(MAO)处理,研究正向电压对陶瓷层厚度、相结构、形貌,结合力以及阻氢渗透性能的影响。利用扫描电镜(SEM)、 X射线衍射仪(XRD)、涂层测厚仪、涂层划痕仪,分别分析了陶瓷层的表面和截面形貌、相结构、陶瓷层厚度以及膜层与基体的结合力,通过真空脱氢实验评价陶瓷层的阻氢性能。结果表明:随着正向电压的增加,氢化锆表面微弧氧化陶瓷层的厚度逐渐增加,当正向电压为375 V时陶瓷层的阻氢性能较好,氢渗透降低因子PRF值可达到14.2;正向电压的改变对陶瓷层的相结构没有明显影响,膜层主要由单斜相氧化锆(m-ZrO2)、四方相氧化锆(t-ZrO2)和立方相氧化铈(c-CeO2)组成,且以单斜相氧化锆(m-ZrO2)为主。Micro-arc oxidation(MAO) process was conducted on zirconium hydride(ZrH1.8) in phosphate electrolyte system under the constant voltage mode. The thickness, phase structure, morphology of ceramic layer, binding force and hydrogen resistance porosity of the ceramic layer were studied by adding CeO2 as additive. The surface and cross-sectional morphology, phase structure, thickness, binding force of ceramic layers were characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD), coating thickness gauge, and coating adhesion automatic scratch tester, respectively. Finally, the hydrogen resistance of ceramic layer was evaluated by vacuum dehydrogenation experiment. The results showed that with the increase of forward voltage, the thickness of the micro-arc oxidation ceramic layer gradually increased. The increase of the forward voltage could effectively improve the compactness of the ceramic layer. When the forward voltage was 375 V, the ceramic layer had better hydrogen barrier performance, and the permeation reduction factor(PRF) could reach to 14.2. The change of forward voltage had no obvious effect on the phase structure of the ceramic layer. The film layer was mainly composed of monoclinic zirconia(m-ZrO2), tetragonal zirconia(t-ZrO2) and cubic phase ceria(c-CeO2), mainly composed of monoclinic zirconia(m-ZrO2).

关 键 词：ZrH1.8 微弧氧化 正向电压 氢渗透降低因子 

分 类 号：TG174.453[金属学及工艺—金属表面处理]