Femtosecond Time-Resolved Spectroscopic Photoemission Electron Microscopy for Probing Ultrafast Carrier Dynamics in Heterojunctions  

飞秒时间分辨的能谱分析光电子显微镜:异质结超快载流子动力学测量（英文）

作　　者：Bo-han Li Guan-hua Zhang Yu Liang Qun-qing Hao Ju-long Sun Chuan-yao Zhou You-tian Tao Xue-ming Yang Ze-feng Ren 李博瀚;张冠华;梁宇;郝群庆;孙巨龙;周传耀;陶友田;杨学明;任泽峰(中国科学院大连化学物理研究所分子反应动力学国家重点实验室,大连116023;南京工业大学,江苏省国家先进材料协同创新中心,柔性电子重点实验室和先进材料研究所,南京211816;南方科技大学化学系,深圳518055;中国科学院大学,北京100049)

机构地区：[1]State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China [2]Key Laboratory of Flexible Electronics (KLOFE)& Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University, Nanjing 211816, China [3]Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China [4]University of Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Chinese Journal of Chemical Physics》2019年第4期399-405,I0002,共8页化学物理学报（英文）

基　　金：supported by the National Key R&D Program (No.2018YFA0208700 and No.2016YFA0200602);the National Natural Science Foundation of China (No.21688102 and No.21403222);the Strategic Priority Research Program of the Chinese Academy of Sciences (No.XDB17000000);the Youth Innovation Promotion Association of Chinese Academy of Sciences (No.2017224)

摘　　要：The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us to understand carrier dynamics in semiconductor heterojunctions with both high spatial and temporal resolutions. Recently, we have successfully set up a timeresolved photoemission electron microscopy (TR-PEEM), which integrates the spectroscopic technique to measure electron densities at specific energy levels in space. This instrument provides us an unprecedented access to the evolution of electrons in terms of spatial location, time resolution, and energy, representing a new type of 4D spectro-microscopy. Here in this work, we present measurements of semiconductor performance with a time resolution of 184 fs, electron kinetic energy resolution of 150 meV, and spatial resolution of about 150 nm or better. We obtained time-resolved micro-area photoelectron spectra and energy-resolved TR-PEEM images on the Pb island on Si(111). These experimental results suggest that this instrument has the potential to be a powerful tool for investigating the carrier dynamics in various heterojunctions, which will deepen our understanding of semiconductor properties in the submicron/nanometer spatial scales and ultrafast time scales.

关 键 词：Time resolution Photoemission electron microscopy Ultrafast carrier dynamics Photoelectron spectroscopy 

分 类 号：TN16[电子电信—物理电子学]