基于金属-半导体-金属结构的Bi2Te3室温高响应率太赫兹探测器  

High responsivity Bi2Te3-based room temperature terahertz detector based on metal-semiconductor-metal structure

作　　者：徐新月 张晓东 吴敬[2] 江林[2] 吴彩阳 姚娘娟[2] 曲越[2,3] 周炜 尹一鸣[2,3] 黄志明 XU Xin-Yue;ZHANG Xiao-Dong;WU Jing;JIANG Lin;WU Cai-Yang;YAO Niang-juan;QU Yue;ZHOU Wei;YIN Yi-Ming;HUANG Zhi-Ming(Department of Applied Physics, College of Science, DongHua University, Shanghai 201620, China;State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, China;University of Chinese Academy of Sciences, Beijing 100049, China;Shanghai Institute of Intelligent Electronics and Systems, Shanghai 201620, China)

机构地区：[1]东华大学理学院应用物理系,上海201620 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [3]中国科学院大学,北京100049 [4]上海智能电子与系统研究所,上海201620

出　　处：《红外与毫米波学报》2019年第4期459-463,472,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61625505,61604160);上海市自然科学基金(16JC1403400,17ZR1444100,17ZR1411500)~~

摘　　要：基于二维拓扑绝缘体Bi 2Te 3材料利用微纳工艺制备了金属-拓扑绝缘体-金属(MTM)结构的太赫兹光电探测器.器件在0.022 THz的响应率可达2×10 3 A/W,噪声等效功率(NEP)低于7.5×10 -15 W/Hz 1/2 ,探测率D*高于1.62 ×10 11 cm·Hz 1/2 /W;在0.166 THz的响应率可达281.6 A/W,NEP低于5.18×10 -14 W/Hz 1/2 ,D*高于2.2×10 10 cm·Hz 1/2 /W;在0.332 THz的响应率可达7.74 A/W,NEP低于1.75×10 -12 W/Hz 1/2 ,D*高于6.7 ×10 8 cm ·Hz 1/2 /W;同时器件在太赫兹波段具有小的时间常数(7~8 μs).该项工作突破了传统光子探测的带间跃迁,实现了可室温工作、高响应率、高速响应以及高灵敏度的太赫兹探测器件.In this study, a metal-topological insulator-metal (MTM) structure terahertz photodetector was fabricated based on a two-dimensional topological insulator Bi 2Te 3 material using a micro-nano process. The responsivity of device reaches 2×10 3 A/W at 0.02 THz, the noise equivalent power (NEP) is lower than 7.5×10 -15 W/Hz 1/2 , and the detectivity D * is higher than 1.62×10 11 cm·Hz 1/2 /W. The responsivity is up to 281.6 A/W at 0.166 THz, NEP is lower than 5.18×10 -14 W/Hz 1/2 , D * is higher than 2.2×10 10 cm·Hz 1/2 /W. The responsivity is up to 7.74 A/W at 0.332 THz, NEP is lower than1.75×10 -12 W/Hz 1/2 , D * is higher than 6.7×10 8 cm·Hz 1/2 /W. At the same time, the response time of device is 7~8 μs in the terahertz band. This work breaks through the inter-band transition of traditional photon detection, and realizes terahertz detectors with room temperature operation, high response rate, high speed response and high sensitivity.

关 键 词：太赫兹探测器 二维材料 BI2TE3 

分 类 号：O511[理学—低温物理] O782[理学—物理]