应用于P波段及L波段AESA的射频发射前端  

RF Transmitter Front-end for P-band and L-band AESA

作　　者：李嘉骏 张为 文枭鹏 刘艳艳[2] Li Jiajun;Zhang Wei;Wen Xiaopeng;Liu Yanyan(School of Microelectronics,Tianjin University, Tianjin 300072, China;College of Electronic Information and Optical Engineering,Nankai University, Tianjin 300350, China)

机构地区：[1]天津大学微电子学院,天津300072 [2]南开大学电子信息与光学工程学院,天津300350

出　　处：《南开大学学报（自然科学版）》2019年第4期34-40,共7页Acta Scientiarum Naturalium Universitatis Nankaiensis

摘　　要：基于TSMC 0.18μm RFCMOS工艺,设计了一款应用于P波段和L波段(405 M-2.2 GHz)的全集成射频发射前端芯片.系统由单转双巴伦、混频器、可变增益放大器和驱动放大器组成,系统架构基于改进的直接上变频方案.基带和本振端口的巴伦采用了一种能够同时实现噪声和非线性消除及宽带阻抗匹配的结构,混频器使用了正交双平衡基尔伯特结构,可变增益放大器基于跨导可变的共源共栅结构进行设计,驱动放大器采用了具有高线性度和宽带匹配特性的推挽结构.后仿真结果表明,在3.3 V电源电压下,该发射前端直流电流为76 m A,版图面积为2.4 mm×2.0 mm;具有可控电压增益10-30 dB;输出1 dB压缩点大于10.8 dBm;中频大于25 MHz时,噪声系数小于8 dB;基带和射频端口反射系数小于-20 dB,本振端口反射系数小于-15 dB.A fully integrated RF front-end transmitter based on TSMC 0.18μm RFCMOS process is proposed for P band and L band(405 M-2.2 GHz)applications.The system which consists of balun,mixer,variable-gain amplifier(VGA)and driver amplifier(DA),is based on improved direct up-conversion architecture.An LNA-Balun combined architecture with noise canceling,distortion canceling and wideband impedance matching is adopted in baseband and LO port balun.Mixer is based on quadrature double-balanced Gilbert architecture.A variable-gmcascode structure is used in VGA.A push-pull architecture with high linearity and wideband matching character is adopted in DA.The post-layout simulation results indicate that under 3.3 V supply voltage,the transmitter front-end obtains a current consumption of 76 mA,layout area of 2.4 mm×2.0 mm,voltage gain spanning from 10 dB to 30 dB,Pout(-1 dB)>10.8 dBm,NF<8 dB when IF frequency above 25 MHz,and reflection coefficient of baseband and RF ports below-20 dB,IF port below-15 d B.

关 键 词：T/R组件 发射前端 低噪声放大器 正交混频器 推挽放大器 

分 类 号：TN432[电子电信—微电子学与固体电子学]