绝缘栅双极晶体管表面电沉积镍基石墨烯薄膜的制备及其散热性能研究  

Preparation and heat dissipation research of nickel-based graphene films in the insulated gate bipolar transistor

作　　者：韩代云[1] 李源彬[2] HAN Daiyun;LI Yuanbin(Department of Information Engineering, Sichuan Technology & Business College, Dujiangyan 405408, China;College of Information Engineering,Sichuan Agricultural University,Yaan 625014,China)

机构地区：[1]四川工商职业技术学院机电工程系,四川都江堰405408 [2]四川农业大学信息工程学院,四川雅安625014

出　　处：《功能材料》2019年第9期9170-9173,9180,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60373110)

摘　　要：将镍基石墨烯薄膜应用在IGBT模块散热方面,提出了镍基石墨烯薄膜的制备工艺,并利用扫描电镜、透射电镜、能谱仪等对镍基石墨烯薄膜进行表征。结果表明,当电流密度为2 A/dm^2时,镍基石墨烯薄膜中的有大量的Ni和C元素,镍基石墨烯薄膜中的石墨烯平均粒径为32.5 nm。当脉冲电流密度为1 A/dm^2时,镍基石墨烯薄转移镍基石墨烯薄膜后的S1芯片的散热效果较好。当脉冲电流密度为2 A/dm^2时,镍基石墨烯薄转移镍基石墨烯薄膜后的S2芯片的散热效果最好,其最大散热量为14.9℃。In this paper, nickel-based graphene film was applied to solve the heat dissipation of IGBT module. The nickel-based graphene film was characterized by scanning electron microscopy(SEM), transmission electron microscopy(TEM) and energy dispersive spectroscopy(EDS). The results show that when the current density was 2 A/dm^2, there were a lot of Ni and C elements in nickel-based graphene film, and the average particle size of graphene in nickel-based graphene film was 32.5 nm. When the pulse current density was 1 A/dm^2, the heat dissipation effect of S1 chip with nickel-based graphene thin-film was better. When the pulse current density was 2 A/dm^2, the heat dissipation effect of S2 chip with nickel-based graphene thin-film transfer was the best, and the maximum heat dissipation was 14.9 ℃.

关 键 词：IGBT 镍基石墨烯薄膜 散热 表征 

分 类 号：TN305.94[电子电信—物理电子学]