P-type SnO thin films prepared by reactive sputtering at high deposition rates  

作　　者：C.Guillén J.Herrero 

机构地区：[1]Department of Energy,CIEMAT,Avda. Complutense 40,Edif. 42,Madrid,28040,Spain

出　　处：《Journal of Materials Science & Technology》2019年第8期1706-1711,共6页材料科学技术（英文版）

基　　金：financially supported by the Spanish Ministry of Science, Innovation and Universities (No. MAT2015-66649-R)

摘　　要：SnO is an ideally suitable p-type conductive material, with large hole mobility, and has attracted great interest in connection with next-generation electronic applications. In the present work, tin oxide(SnOx)thin films were deposited on unheated soda lime glass substrates by reactive DC sputtering from a pure Sn target. The structural, optical and electrical properties of the films were analysed as a function of the oxygen partial pressure in the sputtering atmosphere and of the post-deposition annealing temperature in air. A structural analysis was carried out using Raman spectroscopy and X-ray diffraction. Optical and electrical characterizations were performed using photo-spectrometry and Hall effect measurements,respectively. The films grown at room temperature and low oxygen pressures reached high deposition rates of above 45 nm/min, showing poorly crystalline SnO and low transparency. Subsequent heating to 350℃ allowed to achieve a more crystalline tetragonal SnO with an average visible transmittance of 65%,a p-type conductivity of 0.8 S/cm, and a hole mobility of 3.5 cm^2/(V s).SnO is an ideally suitable p-type conductive material, with large hole mobility, and has attracted great interest in connection with next-generation electronic applications. In the present work, tin oxide(SnOx)thin films were deposited on unheated soda lime glass substrates by reactive DC sputtering from a pure Sn target. The structural, optical and electrical properties of the films were analysed as a function of the oxygen partial pressure in the sputtering atmosphere and of the post-deposition annealing temperature in air. A structural analysis was carried out using Raman spectroscopy and X-ray diffraction. Optical and electrical characterizations were performed using photo-spectrometry and Hall effect measurements,respectively. The films grown at room temperature and low oxygen pressures reached high deposition rates of above 45 nm/min, showing poorly crystalline SnO and low transparency. Subsequent heating to 350℃ allowed to achieve a more crystalline tetragonal SnO with an average visible transmittance of 65%,a p-type conductivity of 0.8 S/cm, and a hole mobility of 3.5 cm^2/(V s).

关 键 词：TRANSPARENT CONDUCTING oxide (TCO) NANOCRYSTALLINE structure Optical absorption HOLE mobility 

分 类 号：TG[金属学及工艺]