Effects of Hot Wire Temperature on Properties of GeSi:H Films with High Hydrogen Dilution by Hot-Wire Chemical Vapor Deposition  

作　　者：TAI Xin LI Xingbing ZHEN Huang SHEN Honglie LI Yufang HUANG Haibin 

机构地区：[1]Institute of Photovoltaics, Nanchang University, Nanchang 330031, Jiangxi, China China [2]China Intellectual Electric Power Technology(Taixing)Co.Ltd., Taixing 225400, Jiangsu, China [3]Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing 211100, Jiangsu, China

出　　处：《Wuhan University Journal of Natural Sciences》2019年第5期405-408,共4页武汉大学学报（自然科学英文版）

基　　金：Supported by the National Key Research and Development Program of China(2018YFB1500400-2018YFB1500403);the National Natural Science Foundation of China(61741404,61464007);the Jiangxi Provincial Key Research and Development Foundation(2016BBH80043)

摘　　要：GeSi:H films are prepared by hot-wire chemical vapor deposition(CVD) with high hydrogen dilution, DH=98%. Effects of hot wire temperature(Tw) on deposition rate, structural properties and bandgap of GeSi:H films are studied with surface profilemeter, Raman spectroscopy, Fourier transformed infrared spectroscopy, and UV-VIS-NIR spectrophotometer. It is found that the deposition rate(Rd) goes up with increasing of Tw, but increasing rate of Rd declines when Tw≥1 550 ℃. High Tw is beneficial to the formation of Ge-Si, but it has little effect on relative contents of the hydrogen bonds(Ge-H, Si-H, etc.) in the films. In the Tw range of 1 400-1 850 ℃, the maximum bandgap of the GeSi:H films is 1.39 eV at Tw =1 450 ℃ and the band gap decreases with Tw increasing when Tw≥1 450 ℃.GeSi:H films are prepared by hot-wire chemical vapor deposition(CVD) with high hydrogen dilution, DH=98%. Effects of hot wire temperature(T_w) on deposition rate, structural properties and bandgap of GeSi:H films are studied with surface profilemeter, Raman spectroscopy, Fourier transformed infrared spectroscopy, and UV-VIS-NIR spectrophotometer. It is found that the deposition rate(Rd) goes up with increasing of T_w, but increasing rate of Rd declines when T_w≥1 550 ℃. High T_w is beneficial to the formation of Ge-Si, but it has little effect on relative contents of the hydrogen bonds(Ge-H, Si-H, etc.) in the films. In the T_w range of 1 400-1 850 ℃, the maximum bandgap of the GeSi:H films is 1.39 eV at T_w =1 450 ℃ and the band gap decreases with T_w increasing when T_w≥1 450 ℃.

关 键 词：GeSi:H FILMS HOT-WIRE chemical vapor deposition(CVD) DEPOSITION rate structural properties band gap hot wire TEMPERATURE 

分 类 号：O484.1[理学—固体物理]