Influence of the finite size effect of Si（001）/SiO2 interface on the gate leakage current in nano-scale transistors  

硅与二氧化硅界面的有限尺寸效应对纳米晶体管栅漏电流的影响（英文）

作　　者：Li Haixia Ji Aiming Zhu Canyan Mao Lingfeng 李海霞;季爱明;朱灿焰;毛凌锋(苏州大学轨道交通学院,苏州215006;宿迁学院信息工程学院,宿迁223800;北京科技大学计算机与通信工程学院,北京100083)

机构地区：[1]School of Rail Transportation,Soochow University,Suzhou 215006,China [2]School of Information Engineering,Suqian College,Suqian 223800,China [3]School of Computer & Communication Engineering,University of Science & Technology Beijing,Beijing 100083,China

出　　处：《Journal of Southeast University(English Edition)》2019年第3期341-350,共10页东南大学学报（英文版）

基　　金：The National Natural Science Foundation of China(No.61774014);Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.KYZZ15_0331);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.19KJB510060)

摘　　要：With the device size gradually approaching the physical limit, the small changes of the Si(001)/SiO 2 interface in silicon-based devices may have a great impact on the device characteristics. Based on this, the bridge-oxygen model is used to construct the interface of different sizes, and the finite size effect of the interface between fine electronic structure silicon and silicon dioxide is studied. Then, the influence of the finite size effect on the electrical properties of nanotransistors is calculated by using the first principle. Theoretical calculation results demonstrate that the bond length of Si-Si and Si-O shows a saturate tendency when the size increases, while the absorption capacity of visible light and the barrier of the interface increase with the decrease of size. Finally, the results of two tunneling current models show that the finite size effect of Si(001)/SiO 2 interface can lead to a larger change in the gate leakage current of nano-scale devices, and the transition region and image potential, which play an important role in the calculation of interface characteristics of large-scale devices, show different sensitivities to the finite size effect. Therefore, the finite size effect of the interface on the gate leakage current cannot be ignored in nano-scale devices.随着器件尺寸逐渐逼近物理极限,硅基器件中硅与二氧化硅界面的微小变化都会对器件特性造成很大的影响,基于此,运用桥氧模型构建了不同尺寸的界面,研究了精细电子结构硅与二氧化硅界面的有限尺寸效应,进而利用第一原理计算了其对纳米晶体管电性能的影响.理论计算结果表明,硅-硅和硅-氧的键长随尺寸的增大呈饱和趋势,界面对可见光的吸收能力以及界面的势垒则随尺寸的减小逐渐增大.最后,隧穿电流的研究结果表明,界面的有限尺寸效应对纳米级别器件的栅极漏电流存在很大的调控作用,而且在大尺寸器件界面特性计算中起重要作用的过渡区和镜像电势,对有限尺寸效应表现出了不同的敏感度.因此,界面的有限尺寸效应对栅极漏电流的影响在纳米级别的器件中已经不可忽略.

关 键 词：finite size effect tunneling current nano-scale transistor 

分 类 号：TN32[电子电信—物理电子学]