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作 者:Defen Guo Kang Hou Weijie Tang Tao Chu
机构地区:[1]1State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]School of Optoelectronics,Beijing Institute of Technology,Beijing 100081,China [3]College of Information Science and Electronic Engineering,Zhejiang University,Hangzhou 310027,China
出 处:《Journal of Semiconductors》2019年第10期4-7,共4页半导体学报(英文版)
基 金:supported by the National Key Research and Development Program of China (No. 2016YFB0402505);the National Science Foundation of China (NSFC) (No. 61575189 and No. 61635011)
摘 要:1.Introduction Silicon photonic integration is considered to be one of the most promising techniques in realizing high-density photonic integrated circuits because of its compact device size and CMOS compatible fabrication process.However,due to the large index contrast of silicon waveguides,silicon photonic devices are affected by the large polarization mode dispersion,polarization dependent loss and polarization dependent wavelength characteristics.Polarization transparent circuits and polarization diversity schemes,which have polarization rotators and splitters as common key devices,have been proposed to solve this issue[1–3].
关 键 词:integrated CIRCUITS fabrication process POLARIZATION DIVERSITY
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