Recent advances of heterogeneously integrated Ⅲ–Ⅴ laser on Si  被引量:7

Recent advances of heterogeneously integrated Ⅲ–Ⅴ laser on Si

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作  者:Xuhan Guo An He Yikai Su 

机构地区:[1]State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University

出  处:《Journal of Semiconductors》2019年第10期54-64,共11页半导体学报(英文版)

基  金:supported by Natural Science Foundation of China (NSFC) under Grant 61805137;Natural Science Foundation of Shanghai under Grant 19ZR1475400;Shanghai Sailing Program under Grant 18YF1411900;the Open Project Program of Wuhan National Laboratory for Optoelectronics No. 2018WNLOKF012

摘  要:Due to the indirect bandgap nature,the widely used silicon CMOS is very inefficient at light emitting.The integration of silicon lasers is deemed as the‘Mount Everest’for the full take-up of Si photonics.The major challenge has been the materials dissimilarity caused impaired device performance.We present a brief overview of the recent advances of integratedⅢ-Ⅴlaser on Si.We will then focus on the heterogeneous direct/adhesive bonding enabling methods and associated light coupling structures.A selected review of recent representative novel heterogeneously integrated Si lasers for emerging applications like spectroscopy,sensing,metrology and microwave photonics will be presented,including DFB laser array,ultra-dense comb lasers and nanolasers.Finally,the challenges and opportunities of heterogeneous integration approach are discussed.Due to the indirect bandgap nature, the widely used silicon CMOS is very inefficient at light emitting. The integration of silicon lasers is deemed as the ‘Mount Everest’ for the full take-up of Si photonics. The major challenge has been the materials dissimilarity caused impaired device performance. We present a brief overview of the recent advances of integrated III–V laser on Si. We will then focus on the heterogeneous direct/adhesive bonding enabling methods and associated light coupling structures. A selected review of recent representative novel heterogeneously integrated Si lasers for emerging applications like spectroscopy, sensing, metrology and microwave photonics will be presented, including DFB laser array, ultra-dense comb lasers and nanolasers. Finally, the challenges and opportunities of heterogeneous integration approach are discussed.

关 键 词:HETEROGENEOUS INTEGRATION LASERS silicon PHOTONICS INTEGRATED CIRCUITS 

分 类 号:TN248.4[电子电信—物理电子学]

 

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