Ⅲ–Ⅴ compound materials and lasers on silicon  

作　　者：Wenyu Yang Yajie Li Fangyuan Meng Hongyan Yu Mengqi Wang Pengfei Wang Guangzhen Luo Xuliang Zhou Jiaoqing Pan 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China

出　　处：《Journal of Semiconductors》2019年第10期65-73,共9页半导体学报（英文版）

基　　金：supported by the National Key Technology R&D Program (Grant No. 2018YFA0209001);Frontier Science Research Project of CAS (Grant No. QYZDY-SSWJSC021)

摘　　要：Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility.Breakthroughs have been made in silicon-based integrated lasers over the past few decades.Here we review three main methods of integration ofⅢ–Ⅴ materials on Si,namely direct growth,bonding,and selectivearea hetero-epitaxy.TheⅢ–Ⅴmaterials we introduced mainly include materials such as GaAs and InP.The lasers are mainly lasers of related communication bands.We also introduced the advantages and challenges of the three methods.Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility. Breakthroughs have been made in silicon-based integrated lasers over the past few decades. Here we review three main methods of integration of Ⅲ–Ⅴ materials on Si, namely direct growth, bonding, and selectivearea hetero-epitaxy. The Ⅲ–Ⅴ materials we introduced mainly include materials such as GaAs and InP. The lasers are mainly lasers of related communication bands. We also introduced the advantages and challenges of the three methods.

关 键 词：INTEGRATED PHOTONICS HYBRID LASER SILICON 

分 类 号：TN248.4[电子电信—物理电子学] TN304.23