溶液法制备Zn1-xFexO透明导电薄膜及其性能研究  

Investigation on Preparation and Properties in Zn1-xFexO Thin Films by Chemical Solution Deposition

作　　者：黄洁 段蕾蕾 吴俊美 惠贞贞 HUANG Jie;DUAN Leilei;WU Junmei;HUI Zhenzhen(College of Chemistry and Material Engineering, Anhui Science and Technology University, Fengyang 233100, China)

机构地区：[1]安徽科技学院化学与材料工程学院

出　　处：《安徽科技学院学报》2019年第4期82-88,共7页Journal of Anhui Science and Technology University

基　　金：安徽省自然科学基金(1808085QE141);安徽科技学院人才引进项目(HCYJ201705);安徽省大学生创新创业训练计划(2017S10879015)

摘　　要：目的:以六方纤锌矿结构的ZnO基薄膜作为室温光电材料,目的是降低薄膜的电阻率,并提高其光学透过率及薄膜结晶质量。方法:采用化学溶液沉积法制备性能优异的Zn1-xFexO薄膜,利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对薄膜样品的微结构及形貌进行表征,并通过物性测量系统和紫外-可见-近红外分光光谱仪对薄膜的电学及光学性能进行测量和分析。结果:发现Fe掺杂ZnO薄膜的颗粒尺寸比未掺杂的薄膜小;当掺杂浓度为1%时,薄膜具有最小的室温电阻率;当Fe含量低于1%时,薄膜的光学带隙随掺杂浓度的增加而增大,但是当掺杂浓度进一步增加时,光学带隙趋于饱和。结论:通过对ZnO薄膜的n型掺杂,进一步引入施主缺陷,使薄膜的电导率和光学透过率可进一步提高,从而实现性能优异ZnO薄膜的稳定可控制备。Objective: Application of ZnO-based thin films with hexagonal wurtzite structure as room temperature photoelectric materials, it is necessary to reduce the resistivity of ZnO thin films and improve their optical transmittance and crystallization quality. Methods: Zn1-xFexO thin films with advanced properties are prepared by chemical solution deposition. X-ray diffraction (XRD) and scanning electronic microscopy (SEM) are used to characterize the microstructures. The electrical and optical properties of the films are measured and analyzed by physical properties measurement system and ultraviolet-visible-near infrared spectroscopy. Results: It is found that the particle size of Fe doped ZnO thin films is smaller than that of undoped ones;when the doping concentration is 1%, the thin film has the smallest room temperature resistivity;when the Fe content is less than 1%, the optical band gap increases with the increase of doping concentration;when the doping concentration is further increased, the optical band gap tends to be saturated. Conclusion: By introducing n-type doping of the ZnO thin film, the donor defect is further introduced, the electrical conductivity and optical transmittance of the thin film can be further improved. Therefore, the stable and controllable preparation of ZnO thin films with excellent properties can be realized.

关 键 词：Zn1-xFexO薄膜 化学溶液沉积法 微结构 电学性能 光学性能 

分 类 号：TB383.2[一般工业技术—材料科学与工程]