一种用于FBAR环境信号检测芯片的全集成低压差线性稳压器电路  

A high performance capacitorless low-dropout regulator for the FBAR sensor circuits

作　　者：赵思琦 高同强 卢新[1,2] 张恒 赵湛 杨海钢[1,2] ZHAO Si-qi;GAO Tong-qiang;LU Xin;ZHANG Heng;ZHAO Zhan;YANG Hai-gang(University of the Chinese Academy of Sciences,Beijing 100190,China;Institute of Electronics,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]中国科学院大学,北京100190 [2]中国科学院电子学研究所,北京100190

出　　处：《微电子学与计算机》2019年第10期73-77,82,共6页Microelectronics & Computer

基　　金：国家自然科学基金(61431019)

摘　　要：本文采用自适应功率管技术实现了一款较高性能的片上低压差线性稳压器(LDO),其中误差放大器在增加动态偏置结构的同时引入瞬态加强级,使得全集成LDO在负载跳变时具有快速瞬态响应,稳定了输出电压.该LDO基于0.18μm标准CMOS工艺进行设计,仿真结果表明,在电源电压3V,输出电压1.2V,负载电容为100pF的条件下,该LDO可稳定输出0~100mA负载电流,实现全负载稳定.并且负载电流在200ns内从0~100mA跳变时,瞬态输出电压变化峰值在150mV以内.This paper uses adaptive power transistor technology to implement a higher performance on-chip low-dropout linear regulator(LDO),in which the error amplifier adds a dynamic bias structure while introducing a transient boost stage,making the integrated LDO has a fast transient response during load transitions that stabilizes the output voltage.The LDO is designed based on the 0.18um standard CMOS process.The simulation results show that the LDO can stably output 0~100mA load current under the condition of 3V power supply voltage,1.2V output voltage and 100pF load capacitance,achieving full load stability.And when the load current jumps from 0to 100mA within 200ns,the peak value of the transient output voltage changes to within 150mV.

关 键 词：片上LDO 双功率管 动态偏置 快速响应 

分 类 号：TN432[电子电信—微电子学与固体电子学]