GaAs晶体的扩散键合工艺优化  

Optimization of diffusion bonding process for GaAs crystals

作　　者：郭芷言 惠勇凌[1] 边慧征 姜梦华[1] 雷訇[1] 李强[1] GUO Zhi-yan;HUI Yong-ling;BIAN Hui-zheng;JIANG Meng-hua;LEI Hong;LI Qiang(Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学激光工程研究院

出　　处：《激光与红外》2019年第10期1206-1211,共6页Laser & Infrared

摘　　要：对影响准相位匹配GaAs晶体的键合质量的因素进行了研究,通过对GaAs面损耗、界面损耗和体损耗的分析,优化了键合工艺和参数。通过在光胶前加入酸洗过程,去除GaAs晶片的表面氧化物,并采用X射线光电子能谱仪(XPS)确认了氧化物去除情况,在无氧环境下进行后续过程;在热处理过程中,通过对GaAs电特性、光学透过率及微结构的分析,调整键合的温度和压力参数,制备了16层的准相位匹配GaAs晶体。当键合温度为550℃、键合压力为0.25kgf/mm^2时,获得低于0.18%的单层界面损耗。The factors affecting the quality of quasi-phase-matched(QPM)GaAs crystal bonding are investigated in the paper.The bonding process and parameters are optimized by analysis of surface defects,interfacial defects between the wafers,and bulk defects within the wafers.The pickling process is added before the optical cement to remove the surface oxide of the GaAs wafer,and the oxide removal is confirmed by X-ray photoelectron spectroscopy(XPS),and the subsequent process is performed in an oxygen-free environment.During the heat treatment process,16 layers of quasi-phase-matched GaAs crystals are prepared by analyzing the electrical properties,optical transmittance and microstructure of GaAs to adjust the temperature and pressure parameters.When the bonding temperature was 550 ℃ and the loading pressure was 0.25 kgf /mm^2,the optical loss per interface was less than 0.18 %.

关 键 词：非线性光学 扩散键合 准相位匹配 砷化镓 

分 类 号：O437[机械工程—光学工程]