NPN双极型晶体管抗辐照加固研究  

Research on Anti-radiation Reinforcement of NPN Bipolar Transistor

作　　者：李飞[1] LI Fei(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang Hebei 050057,China)

机构地区：[1]中国电子科技集团公司第十三研究所

出　　处：《微处理机》2019年第5期1-4,共4页Microprocessors

摘　　要：为了研究NPN双极晶体管辐照后界面态对直流参数的影响,对工艺优化前的国产某NPN双极晶体管进行110keV电子辐照,研究晶体管直流参数的变化。在实验数据基础上对其损伤特性及损伤机理进行分析,阐述其成因并提出解决方法。同时对工艺优化后的双极型晶体管进行辐照,测试界面态电荷数的变化。实验结果显示出晶体管受辐照后基极电流的变化,以及界面态复合电流所起的作用,也揭示了优化工艺后Si-SiO2界面处的界面态及NPN双极型晶体管归一化电流增益的变化趋势。In order to study the influence of interface state on DC parameters of NPN bipolar transistor after irradiation, a domestic NPN bipolar transistor before process optimization was irradiated with 110keV electrons to study the change of DC parameters of the transistor. On the basis of experimental data, the damage characteristics and mechanism are analyzed, the causes are explained and the solutions are proposed. The bipolar transistor after process optimization was irradiated to test the change of interface state charge number. The experimental results show the change of the base current of the transistor after being irradiated and the effect of the interface state recombination current, and also reveal the change trend of the interface state at the Si-SiO2 interface and the normalized current gain of NPN bipolar transistor after optimizing the process.

关 键 词：NPN双极晶体管 110keV电子辐照 复合电流 辐照损伤 晶体管归一化电流增益 

分 类 号：TN32[电子电信—物理电子学]