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作 者:陈家海 贺啟峰 鲁晓进 徐成宝[1] CHEN Jia-hai;HE Qi-feng;LU Xiao-jin;XU Cheng-bao(No.43 Research Institute of CETC,Hefei,230088,China)
机构地区:[1]中国电子科技集团公司第43研究所,合肥230088
出 处:《混合微电子技术》2019年第2期11-15,共5页Hybrid Microelectronics Technology
摘 要:氮化镣(GaN)作为第三代宽禁带的半导体材料,其电子迁移率高、通态电阻小、导热率高以及更高的开关速率,因此氮化镣器件在追求高频化、小型化以及低功耗的开关电源领域具有广阔的应用前景。本文首先介绍了Buck同步整流电路拓扑结构,对基于GaN器件的驱动和开关损耗进行了分析。其次,通过仿真实现了一种氮化铢开关器件的开环仿真和闭环Buck同步整流仿真。最后,通过硬件实验验证了基于GaN器件的Buck同步整流变换器,效率可达94%,证实了可行性。GaN, as the third generation of the semiconductor material with wide band gap, has high electron mobility, low on-state resistance, high thermal conductivity and higher switching rate. Therefore, GaN devices have broad application prospects in the switching power supply fields of high frequency, miniaturization and low power consumption. Firstly, the topology of Buck synchronous rectifier circuit is introduced, and the drive and the loss of Buck circuit based on GaN device is analyzed. Secondly, a driving circuit of GaN switching device and a Buck synchronous rectifier converter are realized by simulation. Finally, the hardware experiment proves that the Buck synchronous rectifier converter based on GaN device has a high efficiency of 94%, which proves the feasibility.
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