直流偏场和面内场作用下ID畴壁中VBL链的消失  

Annihilation of Vertical-Bloch-line Chains in the First Kind of Dumbbell Domain Walls Subjected to BothStatic Bias Field and In-plane Field

作　　者：郭革新[1] 马丽梅[1] 孙会元[1] 聂向富[1] 

机构地区：[1]河北师范大学物理学院

出　　处：《河北师范大学学报（自然科学版）》2002年第6期577-580,共4页Journal of Hebei Normal University：Natural Science

基　　金：河北省自然科学基金资助项目 (10 0 14 7)

摘　　要：研究了直流偏场和面内场联合作用下第 类哑铃畴畴壁中 VBL链的消失 ,即软化过程 .实验发现 ,当直流偏场 Hb>Hsb′时 ,第 类哑铃畴的起始软化面内场 (Hip) OHB和临界面内场 Hip′的数值都比不加直流偏场时的数值低 。Annihilation procession of verticl Bloch line chains in the first kind of dumbbell domain wall subjected to both static bias field and in plane field was investigated experimentally.When H b> H sb ′,it is found that the minimum critical in plane field( H ip ) OHB and maximum critical in plane field H ip ′ were both lower than the in plane field in which the bias field is ignored.Also,the minimum critical in plane field( H ip ) OHB and maximum critical in plane field H ip ′ decrease with the increase of the bias field.

关 键 词：ID畴壁 VBL链 直流偏场 面内场 第I类哑铃畴 垂直布络赫线链 石榴石磁泡膜 

分 类 号：O484.43[理学—固体物理]