Dependence of Magnetoresistance on the Thickness of a Dusted Al Spacer Inserted in CoFe/Cu/CoFe Sandwiches  

作　　者：YanxueCHEN ShouguoWANG LingmoMEI KungwonRhie SangjinByeun 

出　　处：《Journal of Materials Science & Technology》2002年第5期436-438,共3页材料科学技术（英文版）

摘　　要：A series of CoFe(4 nm)/ Cu(X nm)M(Y nm)/ CoFe(6 nm) samples have been prepared at room temperature. An exponential decay of the GMR( Giant Magnetoresistance) with Y was observed for fixed X=2nm. The characteristic decay parameter of Al is obtained to be about 0.26nm, which is rather close to 1 monolayer for Al. A coexistant state of GMR and AMR (anisotropic magnetoresistance) was observed when Y=2 nm. As the Cu spacer is replaced by Al layer, only AMR effect dominates. The experimental data further underline the important role played by the nonmagnetic spacers.A series of CoFe(4 nm)/ Cu(X nm)M(Y nm)/ CoFe(6 nm) samples have been prepared at room temperature. An exponential decay of the GMR( Giant Magnetoresistance) with Y was observed for fixed X=2nm. The characteristic decay parameter of Al is obtained to be about 0.26nm, which is rather close to 1 monolayer for Al. A coexistant state of GMR and AMR (anisotropic magnetoresistance) was observed when Y=2 nm. As the Cu spacer is replaced by Al layer, only AMR effect dominates. The experimental data further underline the important role played by the nonmagnetic spacers.

关 键 词：COFE MAGNETORESISTANCE ANISOTROPY 

分 类 号：TM27[一般工业技术—材料科学与工程]