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机构地区:[1]SchoolofPhysics,UniversityofBath,Bath,BA27AY,UK [2]Dept.ofComput.,UniversityofBradford,Bradford,BD71DP,U
出 处:《Semiconductor Photonics and Technology》1999年第3期129-133,138,共6页半导体光子学与技术(英文版)
基 金:The Foundation of National Railways Ministry , National Studying
摘 要:The wavelength tuning ranges of a grating external-cavity laser diode (ECLD) have been studied by the equivalent cavity method. The maximum tuning range (MTR) and the continuous tuning range (CTR), which are related to the maximum and the minimum threshold carrier densities, are deduced from the threshold condition. We define a ratio of the CTR to the MTR. This ratio is only determined by the reflectivities of the external and internal facets of the ECLD. The analysis shows that there is an appropriate combination of the external and internal-cavity reflectivities to obtain a given CTR in the design of an ECLD.The wavelength tuning ranges of a grating external-cavity laser diode (ECLD) have been studied by the equivalent cavity method. The maximum tuning range (MTR) and the continuous tuning range (CTR), which are related to the maximum and the minimum threshold carrier densities, are deduced from the threshold condition. We define a ratio of the CTR to the MTR. This ratio is only determined by the reflectivities of the external and internal facets of the ECLD. The analysis shows that there is an appropriate combination of the external and internal-cavity reflectivities to obtain a given CTR in the design of an ECLD.
关 键 词:External-cavity Laser Diode REFLECTIVITY Tuning CLC number: TN248.4 Document code:A
分 类 号:TN248.4[电子电信—物理电子学]
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