Charged Centers in ZnS- type Thin Film Electroluminescent Devices  

作　　者：ZHAOHui WANGYong－sheng 等 

机构地区：[1]InstituteofOptoelectronicTechnology,NorthernJiaotongUniversity,Beijing100044,CHN [2]InstituteofOptoelect

出　　处：《Semiconductor Photonics and Technology》1999年第3期143-146,155,共5页半导体光子学与技术（英文版）

基　　金：The 863 Project ,Doctoral Program Foundation of Education Departme

摘　　要：Charged centers exist in the phosphor layer of the common thin film electroluminescent devices. In this article, electron scattering process due to these centers is studied through phase shift analysis. The scattering rates in different cases are obtained and compared with other important scattering processes. Electron transport processed under different charged centers conditions are simulated by means of Monte Carlo method. The quantitative results about the influence of charged centers on electron energy are obtained.Charged centers exist in the phosphor layer of the common thin film electroluminescent devices. In this article, electron scattering process due to these centers is studied through phase shift analysis. The scattering rates in different cases are obtained and compared with other important scattering processes. Electron transport processed under different charged centers conditions are simulated by means of Monte Carlo method. The quantitative results about the influence of charged centers on electron energy are obtained.

关 键 词：ELECTROLUMINESCENCE Charged Centers Scattering ZnS  CLC number:TN15  Document code:A 

分 类 号：TN383.1[电子电信—物理电子学]