Analysis on Additional Crosstalk Caused by Oblique Incident Ray on PIN Detector Array  

Analysis on Additional Crosstalk Caused by Oblique Incident Ray on PIN Detector Array

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作  者:CAO Jun-kai (Chongqing Optoelectronics Research Institute, Chongqing 400060,CHN) 

出  处:《Semiconductor Photonics and Technology》2000年第1期29-33,共5页半导体光子学与技术(英文版)

摘  要:The crosstalk caused by oblique incident ray on a PIN detector array is analyzed. An integral expression of crosstalk factor in relation to incident angle and structure parameters is deduced and the correctness of the deduction is tested and verified.The crosstalk caused by oblique incident ray on a PIN detector array is analyzed. An integral expression of crosstalk factor in relation to incident angle and structure parameters is deduced and the correctness of the deduction is tested and verified.

关 键 词:Si-photodiode Detector arrays CROSSTALK 

分 类 号:TN364.2[电子电信—物理电子学]

 

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