Research and Design of Ge_(0.6)Si_(0.4)/Si Strained-layer Superlattice Planar Optical Waveguide  

作　　者：LIU Shu ping (Taiyuan Heavy Machinery Institute, Taiyuan 030024, CHN) 

出　　处：《Semiconductor Photonics and Technology》2002年第1期19-21,共3页半导体光子学与技术（英文版）

摘　　要：Calculation shown that the refraction index of Ge_0.6Si_0.4/Sistrained-layer superlattice n≈3.64, when L_w=9 nm and L_b=24 nm. Analgorithm of numerical iteration for effective refraction index isemployed to obtain different effective refraction indexes atdifferent thickness (L). As a result, the thickness ofGe_0.6Si_0.4/Si strained-layer superlattice optical waveguide, L≤363nm, can be determined, which is very important for designingwaveguide devices. An optical waveguide can be made into a nanometerdevice by using Ge_0.6 Si_0.4/Si strained-layer superlattice.Calculation shows that the refraction index of Ge 0.6 Si 0.4 /Si strained layer superlattice n ≈3.64, when L w=9 nm and L b=24 nm. An algorithm of numerical iteration for effective refraction index is employed to obtain different effective refraction indexes at different thickness ( L ). As a result, the thickness of Ge 0.6 Si 0.4 /Si strained layer superlattice optical waveguide, L ≤363 nm, can be determined, which is very important for designing waveguide devices. An optical waveguide can be made into a nanometer device by using Ge 0.6 Si 0.4 /Si strained layer superlattice.

关 键 词：Ge_0.6Si_0.4/Si SUPERLATTICE optical waveguide effective refractionindex 

分 类 号：TN252[电子电信—物理电子学]