Fabrication of Poly-Si TFT by Al-induced Lateral Crystallization at Low Temperature  

作　　者：RAORui SUNGuo－cai 等 

机构地区：[1]Dept.ofElectron.Sci.andTech.,HuazhongUniversityofSci.andTech.,Wuhan430074 [2]Dept.ofPhys.HuazhongUniversityofSci.andTech.Wuhan430074,CHN

出　　处：《Semiconductor Photonics and Technology》2001年第1期17-19,23,共4页半导体光子学与技术（英文版）

摘　　要：Using a new low-temperature process (<600 ℃), the poly-Si TFT was fabricated by metal-induced lateral crystallization (MILC). An ultrathin aluminum layer was deposited on a-Si film and selectively formed by photolithography. The films were then annealed at 560 ℃ to obtain laterally crystallized poly-Si film, which is used as the channel area of a TFT. The poly-Si TFT showed an on/off current ratio of higher than 1×10 6 at a drain voltage of 5 V. The electrical properties are much better than TFT fabricated by conventional crystallization at 600 ℃.Using a new low-temperature process (<600 ℃), the poly-Si TFT was fabricated by metal-induced lateral crystallization (MILC). An ultrathin aluminum layer was deposited on a-Si film and selectively formed by photolithography. The films were then annealed at 560 ℃ to obtain laterally crystallized poly-Si film, which is used as the channel area of a TFT. The poly-Si TFT showed an on/off current ratio of higher than 1×10 6 at a drain voltage of 5 V. The electrical properties are much better than TFT fabricated by conventional crystallization at 600 ℃.

关 键 词：MILC Low temperature Poly-Si TFT 

分 类 号：TN304.055[电子电信—物理电子学]