能用于微弱光探测的硅光敏器件  

Silicon Photosensitive Devices Available for Detecting Small Signal of Light

作　　者：张君和[1] 

机构地区：[1]武汉大学物理系,武汉430072

出　　处：《半导体光电》1992年第1期51-55,共5页Semiconductor Optoelectronics

摘　　要：讨论了光电二极管工作于零偏压模式,制作能探测微弱光的光电晶体管和达林顿光电晶体管,提高了第一级光电二极管的光暗电流比值和晶体管在小电流下的放大倍数 h_(FE)。This paper deals with silicon photosensitive devices available for detecting weak light.The detection can be performed by two ways:(1)Develop- ment of photodiode working at zero voltage bias;(2)Manufacture of photo- transistor and Darlinton-phototransistor that can detect small signal of light. The key factors of manufacture are increasing ratio between light current and dark current for first photodiode,and increasing amplification h_(FE)for the transistor at low current level.

关 键 词：光敏器件 光探测器 光晶体管 

分 类 号：TN36[电子电信—物理电子学]