吸收型双稳半导体激光器  

Absorptive-type Bistable Semiconductor Lasers

作　　者：陈建国[1] 

机构地区：[1]四川大学光电系,成都610064

出　　处：《半导体光电》1992年第4期351-358,共8页Semiconductor Optoelectronics

摘　　要：对两段式吸收型双稳半导体激光器的速率方程组进行了解析求解,并逐点跟踪定义双稳环的关键点,确立了介质发射截面与双稳环宽度和高度的关系式。Analytical solutions are derived for the rate equations applicable to two-segment bistable semiconductor lasers.In terms of tracing the key points de- fining the hysteresis,expressions relating the emission cross-sections to the width and height of the hysteresis are established.

关 键 词：半导体激光器 光学双稳 激光器 

分 类 号：TN248.4[电子电信—物理电子学]