磁场下高纯硅的光热电离谱  

Photo-Thermal Ionization Spectroscopy of Ultra-Pure Silicon under Magnetic Field

作　　者：朱景兵 刘普霖[1] 史国良[1] 刘卫军[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200081

出　　处：《Journal of Semiconductors》1992年第4期232-235,共4页半导体学报（英文版）

摘　　要：首次用光热电离法测量了高纯硅在高达4T磁场下剩余杂质电子类氢能级的Zeeman 分裂.由于光热电离法具有高灵敏度与高分辨率的特点,因此能在低至 0.2T磁场下观察到谱线的Zeeman分裂.我们观察到了硅施主束缚态在磁场下的相互耦合现象,并对此作了定性分析.实验表明,光热电离法是研究半导体中浅杂质Zeeman效应的最理想的方法.The Zeeman spectroscopy of residual hydrogenic donor in ultrapure silicon is measuredwith photo-thermal ionization (PTI) technique under magnetic field as high as 4 Tesla for thefirst time. With the high resolution and high sensitivity of PTI spectroscopy, Zeeman splittingcan been observed under magnetic field as low as 0.2 Tesla. The mixing of donor electronicstates induced by magnetic field is observed and discussed. The experiements have proved thatPTI technique is unchallenged in research of Zeeman effect of shallow impurities in sem-iconductors.

关 键 词：磁场 硅 光热电离谱 半导体 

分 类 号：TN304.12[电子电信—物理电子学]