GaAs/GaAlAs量子阱在电场作用下光电流谱的研究  

Study on photocurrent Spectra of GaAs/AlGaAs Quantum Wells in Electric Field

作　　者：江德生[1] 刘大欣[1] 张耀辉[1] 段海龙 吴荣汉[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1992年第6期333-342,共10页半导体学报（英文版）

基　　金：北京超晶格国家重点实验室支持课题

摘　　要：我们用室温和低温下电场下的光电流谱研究了 GaAs/AlGaAs多量子阱p-i-n 二极管的量子限制斯塔克效应.侧面光照下测量的光电流谱明显地反映出轻重空穴激子峰的偏振效应.对光电流谱和光致发光激发光谱进行对比发现,外加电场不仅影响光吸收,也影响多量子阱中光生载流子的漂移过程.光电流谱的线形用 P^-/n^+结的耗尽模型进行了分析,并计入了入射光强度在光传播过程中由于产生吸收跃迁而发生的衰减.光电流谱峰与激发光谱峰的斯塔克位移提供了多量子阱中电场分布的信息,并证明了耗尽区模型的正确性.The quantum-confined Stark effect of GaAs/AlGaAs multiple quantum well (MQW) p-i-n diodes are investigated with photocurrent (PC) spectra under electric field at room andlow temperatures. The polarization effect of light and heavy hole exciton peaks is observedby side-illumination measurements. The comparison of PC and photoluminescence excitation(PLE) spectra indicates that the applied electric field has large influence not only on the opti-cal absorption, but also on the drift processes of the photo-generated carriers in MQWs. Thespectral line shape of PC is analysed by a depletion model of p^-/n^+ junction with the con-sideration of the attenuation of the incident light beam due to absorption transitions. The Starkshift of PC peaks relative to PLE ones gives a clear indication to the distribution of electricfield in MQW region and the validity of depletion model.

关 键 词：量子阱 电场 二极管 光电流谱 

分 类 号：TN310.1[电子电信—物理电子学]