光伏法测量AlAs/GaAs超晶格子带间光跃迁  

Study on Optical Transition between Subbands of AlAs/GaAs Superlattices by Photovoltaic Spectra

作　　者：朱文章[1] 陈朝[1] 刘士毅[1] 江德生[2] 庄蔚华[2] 

机构地区：[1]厦门大学物理系,厦门361005 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1992年第7期405-410,共6页半导体学报（英文版）

基　　金：半导体超晶格国家重点实验室资助

摘　　要：采用电容耦合法,在18—300K温度范围内测量了AlAs/GaAs超晶格的光伏谱.在100K以下,光伏曲线反映了台阶式二维状态密度分布,可观测到6个信号峰.采用Kronig-Penney模型计算势阱中导带和价带子带的位置和带宽,共有3个导带子带,6个重空穴子带和3个轻空穴子带.根据宇称守恒确定光跃迁选择定则,对6个峰进行指认.实验结果与理论计算的结果基本相符合.The photovoltaic spectra (PVS) of AlAs/GaAs superlattices have been taken by capacitor coupling at the temperatures ranging from 18K to 300K. Below 100K, the curves of PVS reflectthe steplike distribution of two-dimenslonal state density, and 6 peaks have been observed. Thelevels and bandwidths of the subbands in the poential well have been calculated by using Kronig-Penney model. For the samples used in the experiment, there are 3 conduction subbands, 3 lighthole subbands and 6 heavy hole subbands. The 6 peaks are assigned according to the selectionrule for optical transition based on the conservation law of parit. The experimental results ag-ree well with the theoretical calculated results.

关 键 词：超晶格 光伏谱法 子带 光跃迁 测量 

分 类 号：TN304.07[电子电信—物理电子学]