Sol-Gel工艺Si基Bi_4Ti_3O_(12)铁电薄膜制备与晶相结构研究  

Study on the Crystal Phase of Bi_4Ti_3O_(12) Thin Films on Si Substrates by Sol-Gel Technique

作　　者：王华[1] 于军[2] 王耘波[2] 秦冬成[1] 

机构地区：[1]桂林电子工业学院通信与信息工程系,广西桂林541004 [2]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《材料科学与工程》2002年第4期504-506,526,共4页Materials Science and Engineering

基　　金：国家自然科学基金资助项目 (69771 0 2 4 );广西教育厅基金资助项目(桂教科研D2 0 0 1 56)

摘　　要：采用Sol Gel工艺制备了Si基Bi4 Ti3O1 2 铁电薄膜。研究了退火温度、退火时间、薄膜厚度等对薄膜晶相结构的影响。研究表明 ,退火温度对Si基Bi4 Ti3O1 2 铁电薄膜晶相结构的影响最为显著 ,而且随退火温度升高 ,Bi4 Ti3O1 2 薄膜更趋向于沿c 轴取向的生长 ;退火时间在 30分钟内对薄膜晶相结构的影响比较明显 ;薄膜厚度及The ferroelectric thin films of Bi\-4Ti\-3O 12 on Si substrates were fabricated by Sol\|Gel technique.The effects of the annealing temperature,annealing time and thickness on crystal phase of Bi\-4Ti\-3O 12 ferroelectric thin films were studied.The results indicated that the annealing temperature was the dominating factor for the formation of crystal phase and hte Bi\-4Ti\-3O 12 had a higher degree of texture or preferred orientation in the c\|caxis with the increase of the annealing temperature.Meanwhile the effects of the annealing time and thickness on crystal phase were not obvious when the annealing time was over 30 minute.

关 键 词：SOL-GEL法 铁电薄膜 晶相结构 制备工艺 钛酸铋 铁电材料 

分 类 号：TM223[一般工业技术—材料科学与工程]