用化学腐蚀制备多孔硅太阳电池减反射膜的研究  

Investigation on Porous Silicon Antireflection Layer Formed by Chemical Etching for Solar Cells

作　　者：谢荣国[1] 席珍强[1] 马向阳[1] 袁俊[1] 杨德仁[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程》2002年第4期507-509,567,共4页Materials Science and Engineering

基　　金：国家自然科学基金资助项目 (599760 35)

摘　　要：采用HF HNO3溶液化学腐蚀 ,在硅片上制备减反射效果优良的多孔硅太阳电池减反射膜 ,借助原子力显微镜 (AFM)和X光电子谱 (XPS)对其表面形貌和成分进行观察 ,发现该膜与电化学阳极腐蚀得到的多孔硅具有相似性 ,其主要成分为非化学配比的硅的氧化物SiOx(X <2 )。采用带积分球的光度分光计 ,测得形成多孔硅减反射膜后 ,硅片表面反射率大大下降 ,,在波长 330～ 80 0nm范围反射率只有 1 5～ 2 9%。研究指出这种强减反射作用 。Porous silicon(PS) antireflection layers for solar cells were prepared by chemical etching in HF/HNO3 based solution.The surface image and composition of the layers were characterized by atomic force microscopy(AFM) and X\|ray photoelectron spectroscopy(XPS).The AFM observation showed that the morphology of chemically etched PS was quite similar to that of the anodized PS.XPS analysis suggested that the PS was of a nonstoichinometric silicon oxide,i.e,SiO\-X ( X <2).In the wavelength range 330～800nm,the relectances of PS were 1\^5～2\^9%,significantly smaller than those of bare silicon,ranging from 22～41%.It is believed that not noly the appropriate refractivity of PS but also its porosity is responsible for the reduced reflectance of PS.

关 键 词：化学腐蚀 制备 多孔硅 太阳电池 减反射膜 硅片 氢氟酸 硝酸 

分 类 号：TM914.4[电气工程—电力电子与电力传动]