氮化硼光电薄膜材料的制备及其性能研究  

Deposition and Study of Properties of Boron Nitride Photoelectric Films

作　　者：祁英昆[1] 张溪文[1] 郝天亮[1] 董博[1] 沈鸽[1] 杜丕一[1] 翁文剑[1] 赵高凌[1] 韩高荣[1] 

机构地区：[1]浙江大学材料系

出　　处：《材料科学与工程》2002年第4期510-512,540,共3页Materials Science and Engineering

基　　金：国家自然科学基金资助项目 (60 0 0 60 0 3)

摘　　要：本文通过热丝辅助等离子体增强化学气相沉积法 (HF PECVD)在单晶硅片和石英片衬底上分别成功生长了氮化硼薄膜材料。用X射线衍射 (XRD和傅立叶变换红外光谱 (FTIR)分析了薄膜样品的结构和组成 ,用扫描电镜 (SEM)观察了薄膜样品的表面形态 ,用紫外—可见光分光光度计 (UV)研究了薄膜样品的紫外吸收特征 ,并确认薄膜样品的光学能隙。此外 。In the paper boron nitride photoelectric thin films were grown using hot\|filament and plasma enhanced chemical vapour deposition technique on monocrystalline silicon polished wafer and quarts glass polished wafer substrates respectively.Measurements of X\|ray diffraction, Infrared Spectrum,Scaning Electron Microscopy and UV\|visible spectrum were performed to study the films structure,surface morphology and ultraviolet absorbance characteristics.In addition,the optical bandgap of hte boron nitriede thin films was estimated and the roles of pretreatment of substrates by ultrasonic technique with cubic boron nitrede powder slurry were discussed.

关 键 词：光电薄膜材料 制备 性能 氮化硼 热丝辅助等离子体增强化学气相沉积 紫外吸收 衬底预处理 半导体材料 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055