基于MoO_3/Ag/MoO_3透明阳极的顶发射OLED的模拟计算与制备  

Simulation Calculation and Preparation of Top Emitting OLEDs with Transparent Anode of MoO_3/Ag/MoO_3

作　　者：李源浩[1,2] 武聪伶 杨君礼[1,2] 李菀丽[1,2] 刘慧慧[1,2] 贾虎生 王华[1,2] 刘旭光[1,4] 伍永安 

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,山西太原030024 [2]太原理工大学新材料工程技术研究中心,山西太原030024 [3]太原理工大学材料科学与工程学院,山西太原030024 [4]太原理工大学化学化工学院,山西太原030024 [5]山西国光半导体照明工程研究有限公司,山西太原030006

出　　处：《发光学报》2015年第4期459-465,共7页Chinese Journal of Luminescence

基　　金：教育部新世纪优秀人才支持计划(NCET-13-0927);国家国际科技合作项目(2012DFR50460);国家自然科学基金(61274056;61205179;61307030;5072105);山西省科技创新团队项目(2012041011)资助

摘　　要：运用传输矩阵法和正交分析法模拟计算出MoO3/Ag/MoO3透明电极的最佳厚度,采用镀膜实验验证模拟计算的准确性,制备了一系列不同MoO3膜厚度和Ag膜厚度的透明电极。然后,制备了一系列顶发射有机电致发光器件:铝/氟化锂(Li F)/三(8-羟基喹啉)铝(Alq3)/N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺/三氧化钼(MoO3)/银(Ag)/三氧化钼(MoO3),来进一步验证模拟计算运用在器件制备中的准确性。MoO3(10 nm)/Ag(10 nm)/MoO3(25 nm)在532 nm处的透射率达到最大值88.256%,以该透明电极制备的器件与参考器件相比,性能有了明显提高,最大亮度和最大效率分别为20076 cd/m2和4.03 cd/A,提高了18.5%和56%。器件性能的提高归因于顶发射OLED器件透射率的提高和MoO3对空穴注入能力的提升。The transfer matrix method and the orthogonal analysis method were used to calculate the optimum film thickness of MoO3/ Ag / MoO3 as a transparent anode. In order to validate the accuracy of simulation calculation,MoO3/ Ag / MoO3 transparent anodes with different thickness of MoO3 and Ag films were fabricated. Then, the top emitting OLEDs with structure of Al / Li F / tris( 8-hydroxyquinolinato) aluminum( Alq3) /N,N'-bis-( 1-naphthyl)-N,N'-biphenyl-1,1'-biphenyl-4,4'-diamine( NPB) / MoO3/ Ag / MoO3 were fabricated to further verify the accuracy of the simulationcalculation used in device fabrication. When the electrode thickness is MoO3( 10 nm) /Ag( 10nm) / MoO3( 25 nm),the device reaches the most optimal performance. The maximum transmittance is 88. 256% at 532 nm. And the maximum luminance and luminous efficiency are 20 076 cd / m2 and 4. 03 cd / A,which are improved by 18. 5% and 56% compared with the reference device,respectively. The results demonstrate a practical way to fabricate highly efficient top emitting OLEDs.

关 键 词：顶发射有机电致发光器件 模拟计算 三氧化钼 透射率 

分 类 号：TN383.1[电子电信—物理电子学]