电子束蒸发a-Si_(1-x)Nd_x薄膜的ESR研究  

ESR STUDIES OF ELECTRON BEAM EVAPORATED a-Si_(1-x)Nd_x FILMS

作　　者：甘润今[1] 张津燕 陈光华[1] 

机构地区：[1]兰州大学物理系,兰州730000

出　　处：《波谱学杂志》1992年第4期361-367,共7页Chinese Journal of Magnetic Resonance

摘　　要：研究了电子束蒸发a-Si_(1-x)Nd_x的薄膜的ESR参数g因子、线型因子l,峰—峰线宽△Bpp、自旋密度Ns随组分x变化的特性.基于这类薄膜的光吸收和电导特性,应用带Nd背键的悬挂键模型分析讨论了这些变化特性的物理原因.The variation of ESR parameters, such as g factor, line-shape factor (ι), peak to peak linewidth (ΔBPP) and spin density ( Ns), with the composition (x ) for electron beam evaporated a-Sil_xNdx films was studied. Based on the optical absorption and conductive properties in this kind of alloy films, using the dangling bond model with Nd back bonds, the variation of properties are analyzed and discussed.

关 键 词：合金 薄膜 电子自旋共振 稀土族 

分 类 号：O484[理学—固体物理]