TiO_2压敏电阻陶瓷元件等静压成型试验研究  

The Effect of Isostatic-pressing Method on TiO_2 Varistor Ceramics

作　　者：李红耘[1,2] 罗绍华[1] 尧巍华[1] 李杰[1] 唐子龙[1] 张中太[1] 庄严 熊西周 

机构地区：[1]清华大学材料科学与工程系 [2]广州新日电子有限公司,广东广州510335 [3]广州新日电子有限公司

出　　处：《电子元件与材料》2002年第12期20-21,26,共3页Electronic Components And Materials

摘　　要：采用干压及干压加等静压两种成型方法,通过对不同样品的电性能和焊接性能的比较,并通过SEM微观形貌的观察,研究了等静压成型对TiO2压敏电阻陶瓷元件的微观结构及电性能的影响。结果表明,经等静压成型的TiO2压敏电阻陶瓷的微观结构比较致密,气孔减少,元件的电压一致性和焊接性能得到较大的改善。The influence of isostatic-pressing method on the microstructure and electrical performance of TiO2 varistor ceramics were investigated. The electrical parameters and soldering property were measured, and the differences between dry-pressing and isostatic-pressing methods were analyzed by means of SEM. It is shown that the lower porosity, more consistent varistor voltage and better soldering property can be acquired by isostatic-pressing method.

关 键 词：陶瓷元件 二氧化钛 压敏电阻器 等静压 电性能 微观结构 

分 类 号：TN304.93[电子电信—物理电子学] TM5[电气工程—电器]