M^2≤1.14的LD抽运的Yb:YAG微晶片激光器  

M^2≤1.14 Diode-pumped Yb: YAG Microchip Laser

作　　者：吴海生[1] 闫平[1] 巩马理[1] 柳强[1] 刘敏 谢韬[1] 

机构地区：[1]清华大学精密仪器系数字光电与激光技术实验室,北京100084

出　　处：《中国激光》2002年第11期961-964,共4页Chinese Journal of Lasers

摘　　要：采用国产1W的InGaAs激光二极管(LD),掺杂浓度为10at.-％的Yb:YAG微晶片(φ5mm×0.6mm),室温下获得了输出功率91.5mW,波长1.049μm的基模激光连续输出,光束质量M^2≤1.14,斜率效率为30％。在晶体制冷情况下,获得了111mW的激光输出,斜率效率达40％。A diode-pumped Yb:YAG microchip laser with good beam quality was presented. At room temperature, 91.5 mW output power at 1.049 μm was obtained with 10 at.-% doped Yb: YAG microchip crystal and 1 W InGaAs diode. The slope efficiency was about 30 % . The M2 values were found to be 1.14 and 1.07 in the vertical and horizontal directions respectively. When the crystal was cooled, 111 mW output power and 40% slope efficiency were obtained.

关 键 词：YB:YAG晶体 光束质量 LD抽运固体激光器 InGaAs激光二极管 

分 类 号：TN248.1[电子电信—物理电子学]