硅基OLED微显示器像素发光电流稳定性的研究  

Pixel Circuit of OLED-On-Silicon Micro Displays with High Current Stability

作　　者：赖良德 李晨[1] 许虞俊 LAI Liangde;LI Chen;XU Yujun(School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China)

机构地区：[1]东南大学电子科学与工程学院

出　　处：《电子器件》2019年第4期898-903,共6页Chinese Journal of Electron Devices

基　　金：江苏省自然科学基金项目(BK20150632)

摘　　要：为了提高硅基OLED微显示器的电流稳定性,提出了一种6T1C型像素电路,该电路既可以减小驱动管阈值电压V th的偏移,又补偿了OLED发光层电流衰减。利用HSPICE进行仿真,仿真结果表明:在阈值电压偏移量为-7.25 mV^7.12 mV和OLED内部电阻偏移量为0~8 MΩ时,该像素电路的发光电流偏差分别为-0.144 LSB^0.416 LSB和-0.48 LSB^0.6 LSB,电流稳定性得到大幅提高。同时,为了保证像素电路能精确反映OLED的电流-电压特性,提出了基于TCLC理论的OLED等效电路模型,该OLED等效电路的仿真数据和实验数据具有良好的一致性。A novel pixel circuit comprising six n-channel MOSFETs and one capacitor is proposed for high current stability organic light emitting diode on silicon micro displays.The pixel circuit improvees the current stability by compensating the threshold voltage(V th)variation of driving transistor and the degradation of organic light emitting diode(OLED).The pixel circuit is verified by HSPICE simulation software.The deviation in emission current of the proposed pixel circuit ranges from-0.144 LSB to 0.416 LSB,when the threshold voltage variation ranges from-7.25 mV to 7.12 mV.The deviation in emission current of the proposed pixel circuit ranges from-0.48 LSB to 0.60 LSB,when the internal resistor of organic light emitting diode increases from 0 MΩto 8 MΩ.The current stability has been greatly improved.Meanwhile,an OLED equivalent circuit basing on TCLC theory is proposed for guaranteeing the pixel circuit precisely predicting the I-V characteristic of OLED.The simulation results are in good agreement with the experimental data.

关 键 词：OLED 微型显示器 像素电路 电流稳定性 

分 类 号：TN27[电子电信—物理电子学]