基于漏栅极反馈技术的低相位噪声VCO设计  被引量:1

Design of a Low-Phase-Noise VCO with Drain-Gate Feedback Technique

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作  者:管媛辉[1] 吴德胜[1] GUAN Yuanhui;WU Desheng(School of Information Communication Engineering,Changchun University of Technology,Changchun 130012,China)

机构地区:[1]长春工业大学信息传播工程学院

出  处:《电子器件》2019年第4期920-923,共4页Chinese Journal of Electron Devices

基  金:吉林省教育科学十三五规划课题项目(GH180181);吉林省高教学会课题项目(JGJX2018D77)

摘  要:提出了一种新颖的嵌有阻抗变换模块(ITB),而不具有尾电流源的压控振荡器(VCO)。ITB的引入抑制了由有源器件引起的噪声退化问题,交叉耦合晶体管基本上工作于饱和状态,抑制了LC谐振回路品质因子的降低。而且,该结构相对于传统的VCO而言,具有更容易满足的起振条件,并且保持了低电压工作下的低噪声性能。基于0.18μm CMOS工艺对该VCO进行设计并流片实现,测试结果表明,所提出的VCO振荡频率为4.82 GHz^6.1 GHz,调谐范围为23.5%,相位噪声为-122.5 dBc/Hz@1 MHz^115.6 dBc/Hz@1 MHz,电路在1 V电压供电下,消耗了1.5 mW的功耗。A new voltage controlled oscillator(VCO)without tail current source imbedded with an impedance transformation block(ITB)has been presented.Using this ITB,the noise generation from active devices is reduced.The cross-coupled transistors remain mostly in the saturation region and prevent decreasing of LC-tank quality factor.Moreover this structure benefits from more relaxed start-up condition as compared to the conventional VCO and preserves its low phase-noise performance even in low voltage operation.This VCO is designed and implemented in 0.18μm CMOS process.The measured results show that the proposed VCO achievs a phase noise between-122.5 dBc/Hz and-115.6 dBc/Hz at 1 MHz frequency offset with 23.5%tuning range between 4.82 GHz and 6.1 GHz.The circuit consumption is 1.5 mW from the 1 V supply.

关 键 词:压控振荡器 低相位噪声 反馈技术 交叉耦合 LC谐振回路 品质因子 

分 类 号:TN432[电子电信—微电子学与固体电子学]

 

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