合成及薄膜制备条件对CsPbBr3全无机钙钛矿量子点特性的影响  

Effects of Synthesis and Film Preparation Conditions on Properties of CsPbBr3 Inorganic Perovskite Quantum Dots

作　　者：马雪 庄仕伟 韩丽锦 胡大强[1] 张源涛[1] 董鑫[1] 吴国光[1] 张宝林[1] MA Xue;ZHUANG Shi-wei;HAN Li-jin;HU Da-qiang;ZHANG Yuan-tao;DONG Xin;WU Guo-guang;ZHANG Bao-lin(State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China)

机构地区：[1]集成光电子学国家重点实验室吉林大学电子科学与工程学院

出　　处：《发光学报》2019年第8期949-955,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61574069)资助项目~~

摘　　要：通过对不同合成条件与制备参数的量子点及其薄膜进行一系列特性表征,实现铯铅溴量子点(CsPbBr3)合成条件和薄膜制备参数的优化。利用热注入的方法,研究了反应温度与反应时间对CsPbBr3量子点特性的影响。设计并获得了不同合成条件下的CsPbBr3量子点样品,并对所有样品进行了特性表征。随后将所有CsPbBr3量子点样品制备成薄膜,探究其薄膜的光致发光特性。反应温度为180℃、反应时间为5s时所合成的量子点尺寸最小,为9nm;旋涂速度为3000r/min、退火温度为80℃、退火时间为10min时,所制备的薄膜光致发光强度最大。得到了相对最优的CsPbBr3量子点合成条件与CsPbBr3量子点薄膜制备条件。By a series of characterization of quantum dots and their films for different synthesis conditions and preparation parameters,the synthesis conditions of cesium lead bromide quantum dots and the quantum dots film preparation parameters are optimized.The effects of reaction temperature and reaction time on the properties of CsPbBr 3 perovskite quantum dots were studied by thermal injection.The quantum dot samples of perovskite under different synthetic conditions were obtained and characterized.Then all CsPbBr 3 quantum dot samples were prepared into thin films to explore its photoluminescence properties.When the reaction temperature is 180℃,the reaction time is 5 s,the quantum dot size is 9 nm,reaching the minimum value.With the spin speed of 3 000 r/min,the annealing temperature of 80℃and the annealing time of 10 min,the CsPbBr 3 quantum dots film has the strongest photoluminescence intensity.The optimum synthesis conditions of CsPbBr 3 quantum dots and the CsPbBr 3 quantum dots film preparation conditions were obtained.

关 键 词：钙钛矿 CsPbBr3 量子点 TEM 光致发光 

分 类 号：TP394.1[自动化与计算机技术—计算机应用技术] TH691.9[自动化与计算机技术—计算机科学与技术]