迈克耳孙干涉在电场-应变效应测量中的应用  

Measuring electric field-strain effect by Michelson interferometer

作　　者：宫德维[1] 王晓鸥[1] 赵远[1] GONG De-wei;WANG Xiao-ou;ZHAO Yuan(Department of Physics,Harbin Institute of Technology,Harbin,Heilongjiang 150001,China)

机构地区：[1]哈尔滨工业大学物理学系

出　　处：《大学物理》2019年第8期46-49,共4页College Physics

基　　金：哈尔滨工业大学教学改革题目“新时代新工科大学物理教学体系”;黑龙江省高等教育科学“十三五”规划课题(GBB1318030)资助

摘　　要：本文将大学物理光学部分中的迈克耳孙干涉应用于电场-应变效应的测量,给出了利用迈克耳孙干涉进行电场-应变效应测量的实验原理.对铌酸锂(LiNbO3)晶体电场-应变效应进行了实验测试,并对影响测量精度的因素进行了分析.结果显示可以利用迈克耳孙干涉的方法对电场-应变效应进行测量.The method of Michelson interference in the optical part of college physics is applied to the measurement of electric field-strain effect.The experimental principle of electric field-strain effect measurement using Michelson interference is analyzed.The electric field-strain effect of LiNbO3 crystal is measured experimentally and the factors affecting the measurement accuracy is analyzed.The results have shown that the method of Michelson interference can be used to measure electric field-strain effect very well.

关 键 词：迈克耳孙干涉 电场-应变效应 压电效应 电致伸缩效应 

分 类 号：O433[机械工程—光学工程]