基于肖特基二极管的670 GHz四次谐波混频器设计  

Design of a 670 GHz fourth harmonic mixer based on Schottky diode

作　　者：纪广玉[1,2,3] 张德海 孟进[1,2] JI Guangyu;ZHANG Dehai;MENG Jin(Key Laboratory of Microwave Remote Sensing,Chinese Academy of Sciences,Beijing 100190,China;National Space Science Center,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微波遥感技术重点实验室,北京100190 [2]中国科学院国家空间科学中心,北京100190 [3]中国科学院大学,北京100049

出　　处：《太赫兹科学与电子信息学报》2019年第4期552-556,566,共6页Journal of Terahertz Science and Electronic Information Technology

摘　　要：常温固态太赫兹谐波混频器是太赫兹系统应用中的关键器件。介绍了一款基于肖特基二极管的670 GHz四次谐波混频器的仿真与设计。在高频结构仿真软件(HFSS)中对准垂直结构肖特基势垒变阻二极管进行三维结构建模,采用基于谐波平衡算法的整体综合仿真方法对混频器进行仿真和优化。结果表明:在功率为10 mW的167 GHz本振信号驱动下,混频器单边带变频损耗在637~697 GHz射频频率范围内小于13.8 dB,3 dB变频损耗带宽为60 GHz;最优单边带变频损耗在679 GHz为10.6 dB。The solid-state harmonic mixer is vital to terahertz application system,which directly dominate the system performance.Simulation and design of a 670 GHz fourth harmonic mixer are described based on anti-parallel Schottky barrier diode with quasi-vertical structure.We use integrated simulation method based on harmonic balance algorithm to simulate and optimize the mixer,with the basis on the precise three-dimension model of quasi-vertical built in High Frequency Simulation Simulator(HFSS).Simulated result shows that under the Local Oscillator(LO)power of 10 mW in 167 GHz,the single-sideband conversion loss is less than 13.8 dB between 637-697 GHz of RF frequency.The minimum single sideband conversion loss is 10.6 dB at 679 GHz.The 3 dB conversion loss bandwidth is 60 GHz.

关 键 词：太赫兹 四次谐波混频器 准垂直结构 反向并联 

分 类 号：TN773[电子电信—电路与系统]