1.3μm InAs/GaAs量子点侧向耦合浅刻蚀分布反馈激光器  

1.3 μm InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings

作　　者：李齐柱 伏霞[2] 张子旸[3] 王旭 陈红梅[3] 侯春彩 黄源清 郭春扬 闵嘉华[1] LI Qizhu;FU Xia;ZHANG Ziyang;WANG Xu;CHEN Hongmei;HOU Chuncai;HUANG Yuanqing;GUO Chunyang;MIN Jiahua(School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China;Patent Examination Cooperation Jiangsu Center of the Patent Office,National Intellectual Property Administration,Suzhou 215163,Jiangsu,China;Key Lab of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,Jiangsu,China)

机构地区：[1]上海大学材料科学与工程学院,上海200444 [2]国家知识产权局专利局专利审查协作江苏中心,江苏苏州215163 [3]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123

出　　处：《上海大学学报（自然科学版）》2019年第4期472-483,共12页Journal of Shanghai University:Natural Science Edition

基　　金：国家自然科学基金资助项目(61575215);科技部重点研究与发展计划资助项目(2016YFB0402303)

摘　　要：为了简化工艺流程和减轻制备难度,提出了1.3μm分布反馈(distributed feedback,DFB)激光器的新型制作方法.该方法采用纯折射率侧向耦合(laterally coupled,LC)结构,将一阶光栅浅刻蚀在脊形波导两侧,避免了激光器材料的二次外延和光栅深刻蚀.采用非掺杂和p掺杂两种InAs/GaAs量子点(quantum dot,QD)样品来制备LC-DFB激光器.与采用传统方法制备的DFB激光器相比,非掺杂量子点LC-DFB激光器表现出了低的阈值电流,其值为1.12mA/量子点层;p掺杂量子点LC-DFB激光器表现出了较大的特征温度和斜率效率.在室温下,这种浅刻蚀的LC-DFB激光器实现了单纵模连续输出,边模抑制比(side mode suppression ratio,SMSR)高达51dB.同时,在不同的测试温度和注入电流下,这种激光器表现出了优良的波长稳定性.1.3μm浅刻蚀量子点LC-DFB激光器有望在远距离光纤通信领域实现巨大应用价值.An improved way of fabricating 1.3μm distributed feedback(DFB)laser is presented to avoid overgrowth and deep etching.This structure has laterally index-coupling first-order gratings fabricated by shallow etching alongside the ridge waveguide.It is named laterally coupled DFB(LC-DFB)laser,whose properties is better than that of traditional DFB lasers.Two InAs/GaAs quantum dot(QD)samples,undoped QD and p-doped QD are prepared for DFB lasers.A low threshold current of 1.12 mA per QD layer is achieved by the undoped QD LC-DFB lasers.A high characteristic temperature and differential quantum efficiency is obtained by p-doped QD LC-DFB lasers.The index-coupled LCDFB laser achieves single longitudinal mode continuous-wave operation with a large side mode suppression ratio(SMSR)of 51 dB.The laser also shows good wavelength stability against drive current and working temperature.The 1.3μm InAs/GaAs QDs LC-DFB laser with regrowth-free shallow-etched gratings promises great potential applications in long-distance fibre-optics communication.

关 键 词：分布反馈激光器 侧向耦合 浅刻蚀光栅 边模抑制比 

分 类 号：TN31[电子电信—物理电子学]